Methods of fabricating silicide pattern structures

ABSTRACT

Silicide interfaces for integrated circuits, thin film devices, and back-end integrated circuit testing devices are formed using a barrier layer, such as titanium nitride, disposed over a porous, thin dielectric layer which is disposed between a silicon-containing substrate and a silicidable material which is deposited to form the silicide interfaces for such devices. The barrier layer prevents the formation of a silicide material within imperfections or voids which form passages through the thin dielectric layer when the device is subjected to a high temperature anneal to form the silicide contact from the reaction of the silicidable material and the silicon-containing substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of application Ser. No.10/174,164, filed Jun. 17, 2002, pending, which is a divisional ofapplication Ser. No. 09/795,882, filed Feb. 28, 2001, now U.S. Pat. No.6,410,420, issued Jun. 25, 2002, which is a continuation of applicationSer. No. 09/136,384, filed Aug. 19, 1998, now U.S. Pat. No. 6,235,630,issued May 22, 2001.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to contact interfaces on thesurface of semiconductor substrates and methods of forming the same.More particularly, the present invention relates to forming silicideinterfaces for use with thin film devices and backend integrated circuit(“IC”) testing devices.

[0004] 2. Background of Related Art

[0005] In the processing of integrated circuits, electrical contact mustbe made to isolated active-device regions formed within a semiconductorsubstrate, such as a silicon wafer. Such active-device regions mayinclude p-type and n-type source and drain regions used in theproduction of NMOS, PMOS, and CMOS structures for production of DRAMchips and the like. The active-device regions are connected byconductive paths or lines which are fabricated above an insulative ordielectric material covering a surface of the semiconductor substrate.To provide electrical connection between the conductive path and theactive-device regions, openings in the insulative material are generallyprovided to enable a conductive material to contact the desired regions,thereby forming a “contact.” The openings in the insulative material aretypically referred to as “contact openings.”

[0006] Higher performance, lower cost, increased miniaturization ofcomponents, and greater packaging density of integrated circuits aregoals of the computer industry. However, as components become smallerand smaller, tolerances for all semiconductor structures (such ascircuitry traces, contacts, dielectric thickness, and the like) becomemore and more stringent. In fact, each new generation of semiconductordevice technology has seen a reduction in contact size of, on average,about 0.7 times. Further, the reduction in size of integrated circuitsalso results in a reduction in the height of the integrated circuits.

[0007] Of course, the reduction in contact size (i.e., diameter) hasresulted in a greatly reduced area of contact between the active-deviceregions and the conductive material. Regardless of the conductivematerial used to fill these small contact openings to form the contacts(such as tungsten or aluminum), the interface between the conductivematerial and active-device region must have a low resistance.

[0008] Various methods have been employed to reduce the contactresistance at the interface between the conductive material andactive-device region. One such method includes the formation of a metalsilicide contact interface atop the active-device region within thecontact opening prior to the application of the conductive material intothe contact opening. A common metal silicide material formed is cobaltsilicide (CoSi_(x), wherein x is predominately equal to 2) generatedfrom a deposited layer of cobalt. Cobalt silicide is preferred forshallow junctions of thin film structures because it forms very smooth,fine grained silicide, and will not form tightly bonded compounds witharsenic or boron atoms used in the doping of shallow junctions.

[0009] FIGS. 27-31 illustrate a common method of forming a cobaltsilicide layer on an active-device region of a thin film semiconductordevice. FIG. 27 illustrates an intermediate structure 400 comprising asemiconductor substrate 402 with a polysilicon layer 404 thereon,wherein the polysilicon layer 404 has at least one active-device region406 formed therein with a thin dielectric layer 408, such as tetraethylorthosilicate—TEOS, disposed thereover. The dielectric layer 408 must beas thin as possible to reduce the height of the thin film semiconductordevice. A contact opening 412 is formed, by any known technique, such aspatterning and etching, in the dielectric layer 408 to expose a portionof the active-device region 406, as shown in FIG. 28. A thin layer ofcobalt 414 is applied over the dielectric layer 408 and the exposedportion of the active-device region 406, as shown in FIG. 29. A hightemperature anneal step is conducted in an inert atmosphere to react thethin cobalt layer 414 with the active-device region 406 in contacttherewith which forms a cobalt silicide layer 416, as shown in FIG. 30.However, dielectric materials, such as TEOS—tetraethyl orthosilicate,BPSG—borophosphosilicate glass, PSG—phosphosilicate glass, andBSG—borosilicate glass, and the like, are generally porous. Thus, thethin dielectric layer 408 has imperfections or voids which form passagesthrough the thin dielectric layer 408. Therefore, when thehigh-temperature anneal is conducted, cobalt silicide also forms inthese passages. The cobalt silicide structures in the passages arereferred to as patches 418, as also shown in FIG. 30. When thenonreacted cobalt layer 414 is removed to result in a final structure422 with a cobalt silicide layer 416 formed therein, as shown in FIG.31, the patches 418 also form conductive paths between the upper surfaceof the thin dielectric layer 408 which can cause shorting and currentleakage on IC backend testing devices which leads to poor repeatabilityand, thus, poor reliability of the data from the testing devices.

[0010] Although such voids can be eliminated by forming a thickerdielectric layer 424, the thicker dielectric layer 424 leads to poorstep coverage of the cobalt material 426 in bottom corners 428 of thecontact opening 412, as shown in FIG. 32. The poor step coverage iscause by a build-up of cobalt material 426 on the upper edges 432 of thecontact opening 412 which causes shadowing of bottom corners 428 of thecontact openings 412. The result is little or no cobalt material 426deposited at the bottom corners 428 of the contact opening 412 andconsequently an inefficient silicide contact formed after annealing.

[0011] Step coverage can be improved by using filtering techniques, suchas physical collimated deposition and low-pressure long throwtechniques, which are used to increase the number of sputtered particlescontacting the bottom of the contact opening. However, such filteringtechniques are costly and the equipment is difficult to clean.Furthermore, filtering techniques also reduce the deposition rate of thecobalt material which reduces product throughput and, in turn, increasesthe cost of the semiconductor device. Moreover, using a thick dielectriclayer is counter to the goal of reducing semiconductor device size.Finally, a thick dielectric layer eliminates the ability of thestructure to be used as a backend IC probing device since the contactsare too small and too deep in the dielectric material. This is a resultof dielectric material not being scalable. As device geometries getsmaller, the thickness of the dielectric cannot be reduced without thepotential of shorting and/or formation of patches. Thus, contact sizemust be increased to allow probe tips to fit in contacts, which iscounter to the goal of reducing semiconductor device size.

[0012] Thus, it can be appreciated that it would be advantageous todevelop a technique and a contact interface which is free from patchformations, while using inexpensive, commercially available, widelypracticed semiconductor device fabrication techniques and equipmentwithout requiring complex processing steps.

SUMMARY OF THE INVENTION

[0013] The present invention relates to methods of forming silicideinterfaces for use with thin film devices and backend integrated circuittesting devices and structures so formed. The present invention isparticularly useful when a porous dielectric layer is disposed between asilicon-containing substrate and a silicidable material deposited toform a silicide contact in a desired area. As previously discussed,dielectric layers may have imperfections or voids which form passagesthrough the thin dielectric layer. Therefore, when the high-temperatureanneal is conducted to form the silicide contact from the reaction ofthe silicidable material and the silicon-containing substrate, asilicide material may also form in these passages through the dielectricmaterial. Such silicide material extending through these passages cancause shorting and current leakage. The present invention prevents theformation of silicide material through passages in the dielectricmaterial by the application of a barrier layer between the dielectricmaterial and the silicidable material.

[0014] In an exemplary method of forming a contact according to thepresent invention, a semiconductor substrate is provided with apolysilicon layer disposed thereon, wherein at least one active-deviceregion is formed in a polysilicon layer. A thin dielectric layer isdeposited or grown (such as by a thermal oxidation process) over thepolysilicon layer and a layer of barrier material, preferably titaniumnitride, is deposited over the thin dielectric layer.

[0015] A mask material is patterned on the barrier material layer and acontact opening is then etched through the barrier material layer andthe thin dielectric layer, preferably by an anisotropic etch, to exposea portion of the active-device region. Any remaining mask material isremoved and a thin layer of silicidable material, such as cobalt,titanium, platinum, or palladium, is deposited over the barrier materiallayer and into the contact opening over the exposed portion of theactive-device region. A high temperature anneal is conducted to reactthe thin silicidable material layer with the active-device region incontact therewith, which forms a silicide contact. The barrier materialprevents the formation of silicide structures within voids andimperfections in the thin dielectric layer. The nonreacted silicidablematerial layer and remaining barrier material layer are then removed.

[0016] In an exemplary method of forming a testing contact used inbackend testing of semiconductor devices, a silicon-containing substrateis provided having at least one contact projection disposed thereon. Afirst dielectric layer is deposited or grown over the substrate and thecontact projection. A layer of polysilicon is then deposited over thefirst dielectric layer. A second dielectric layer is optionallydeposited over the polysilicon layer and a layer of barrier material isdeposited over the optional second dielectric layer, or over thepolysilicon, if the optional second dielectric layer is not used.

[0017] A mask material is patterned on the barrier material layer. Thebarrier material layer and the optional second dielectric layer (ifused) are then etched to expose the polysilicon layer over the contactprojection, then any remaining mask material is removed. A thin layer ofsilicidable material is deposited over the barrier material layer andonto the exposed contact projection. A high temperature anneal isconducted to react the thin silicidable material layer with the exposedportion of the polysilicon layer over the contact projection which formsa silicide layer. The nonreacted silicidable material layer and theremaining barrier material layer are then removed to form the testingcontact.

BRIEF DESCRIPTION OF THE DRAWINGS

[0018] While the specification concludes with claims particularlypointing out and distinctly claiming that which is regarded as thepresent invention, the advantages of this invention can be more readilyascertained from the following description of the invention when read inconjunction with the accompanying drawings in which:

[0019] FIGS. 1-8 are cross-sectional views of a method of forming acontact interface in a thin semiconductor structure according to thepresent invention;

[0020]FIG. 9 is a cross-sectional view of CMOS structures within amemory array of a DRAM chip formed by a method according to the presentinvention;

[0021] FIGS. 10-17 are cross-sectional views of a method of forming atesting interface according to the present invention;

[0022]FIG. 18 is a cross-sectional view of a testing interface accordingto the present invention with a chip-under-test disposed therein;

[0023] FIGS. 19-26 are cross-sectional views of another method offorming a testing interface according to the present invention;

[0024] FIGS. 27-31 are cross-sectional views of a method of forming acontact interface in a thin semiconductor structure according to a knowntechnique; and

[0025]FIG. 32 is a cross-sectional view of the deposition of a metallayer in an opening in a thick dielectric according to a knowntechnique.

DETAILED DESCRIPTION OF THE INVENTION

[0026] FIGS. 1-8 illustrate a method of forming a contact interface ofthe present invention. It should be understood that the illustrationsare not meant to be actual views of any particular semiconductor device,but are merely idealized representations which are employed to moreclearly and fully depict the formation of contact interfaces in thepresent invention than would otherwise be possible. Additionally,elements common between FIGS. 1-8 retain the same numerical designation.

[0027] Although the examples presented are directed to the formation ofcobalt silicide contact interfaces, any metal or metal alloy which iscapable of forming a silicide may be employed, including, but notlimited to, titanium, platinum, or palladium.

[0028]FIG. 1 illustrates a semiconductor substrate 100, such as asilicon-containing substrate, having a polysilicon layer 102 thereon,wherein at least one active-device region 104 is formed in a polysiliconlayer 102, with a thin dielectric layer 106, such as TEOS, of athickness of approximately 1 kÅ disposed over the polysilicon layer 102.A layer of barrier material 108, preferably titanium nitride depositedto a thickness of between about 100-150 Å, is deposited over the thindielectric layer 106, such as by PVD, as shown in FIG. 2. Otherpotential barrier materials include tungsten nitride, tungsten siliconnitride, titanium silicon nitride, and the like.

[0029] A mask material 112 is patterned on the barrier material layer108, as shown in FIG. 3. A contact opening 114 is then etched throughthe barrier material layer 108 and the thin dielectric layer 106,preferably by a dry etch such as reactive ion etching or the like, toexpose a portion of the active-device region 104, then any remainingmask material 112 is removed, as illustrated in FIG. 4. A thin layer ofcobalt 116 is deposited, preferably by PVD, over the barrier materiallayer 108 and into the contact opening 114 over the exposed portion ofthe active-device region 104, as shown in FIG. 5. A high temperatureanneal step, preferably between about 400 and 800° C., most preferablybetween about 450 and 600° C. for between about 5 seconds and 1 hour, isconducted in an inert atmosphere, preferably nitrogen containing gas, toreact the thin cobalt layer 116 with the active-device region 104 incontact therewith which forms a cobalt silicide layer 118, as shown inFIG. 6. The barrier material layer 108 prevents the formation of cobaltsilicide structures within voids and imperfections in the thindielectric layer 106. In particular, it has been found that a thintitanium nitride film acts as a good diffusion barrier for a thin TEOSdielectric layer. Further, it has been found that titanium nitride doesnot react with cobalt. Thus, cobalt silicide patch formations have beeneliminated when titanium nitride is used as a barrier layer over a thinTEOS dielectric layer.

[0030] The nonreacted cobalt layer 116 is removed, preferably by a wetetch such as hydrochloric acid/peroxide or sulfuric acid/peroxidemixtures, wherein the barrier material layer 108 preferably acts as anetch stop, as shown in FIG. 7. Preferably, the nonreacted cobalt layer116 is etched in a dilute HPM (Hydrochloric acid/Peroxide Mixture)solution (typically, 1 volume of hydrochloric acid to 1 volume ofperoxide to 5 volumes of water) for about 30 seconds at about 30° C.Such an HPM solution is preferred because its selectivity is greaterthan 10⁴ for cobalt against cobalt silicide and titanium nitride.

[0031] As shown in FIG. 8, the remaining barrier material layer 108 isthen removed, preferably by etching in an APM solution (Ammonia/PeroxideMixture) solution (typically, 1 volume of ammonia to 1 volume ofperoxide to 5 volumes of water) for between about 1 and 2 minutes atabout 65° C. Such an APM solution is preferred because of itsselectivity for titanium nitride against cobalt silicide and TEOS.

[0032] It is contemplated that the process of the present invention maybe utilized for production of DRAM chips, wherein the contact interfacesare used in the MOS structures within a memory array of a DRAM chip.Such a MOS structure 200 is illustrated in FIG. 9 as a portion of amemory array in a DRAM chip. The MOS structure 200 comprises asemiconductor substrate 202, such as a lightly doped P-type crystalsilicon substrate, which has been oxidized to form thick field oxideareas 204 and exposed to implantation processes to form drain regions206 and source regions 208. Transistor gate members 212, including awordline 214 bounded by insulative material 216, are formed on thesurface of the semiconductor substrate 202 and thick field oxide areas204. A barrier layer 218 is disposed over the semiconductor substrate202, the thick field oxide areas 204, and the transistor gate members212. The barrier layer 218 has bitline contacts 222 contacting thesource regions 208 for electrical communication with a bitline 224 and,further, has capacitor contacts 226 contacting the drain regions 206 forelectrical communication with memory cell capacitors 228. Each of thebitline contacts 222 and capacitor contacts 226 may have silicide layerinterfaces 232, formed as described above, for reducing resistancebetween the bitline contacts 222 and the source regions 208, and betweenthe capacitor contacts 226 and the drain regions 206. The memory cellcapacitors 228 are completed by depositing a dielectric material layer234, then depositing a cell poly layer 236 over the dielectric materiallayer 234.

[0033] FIGS. 10-17 illustrate a method of forming a testing contact usedin backend testing of semiconductor devices. It should be understoodthat the illustrations are not meant to be actual views of anyparticular semiconductor device, but are merely idealizedrepresentations which are employed to more clearly and fully depict theformation of contact interfaces in the present invention than wouldotherwise be possible. Additionally, elements common between FIGS. 10-17retain the same numerical designation.

[0034]FIG. 10 illustrates a substrate 302 having at least one contactprojection 304 disposed thereon, preferably with a height ofapproximately 100 μm, wherein the substrate 302 and the contactprojection 304 have a first dielectric layer 306, preferably silicondioxide, disposed thereover. The first dielectric layer 306 may bedeposited by any known technique or, if silicon dioxide, may be grown onthe surface of the substrate 302 by a thermal oxidation process. A layerof polysilicon 308 is deposited by any known technique over the firstdielectric layer 306. As shown in FIG. 1, a second dielectric layer 312,such as TEOS or silicon dioxide, is deposited over the polysilicon layer308 and a layer of barrier material 314, preferably titanium nitride, isdeposited over the second dielectric layer 312, such as by PVD.

[0035] A mask material 316 is patterned on the barrier material layer314, as shown in FIG. 12. The barrier material layer 314 and the seconddielectric layer 312 are then etched, preferably by a dry etch such asreactive ion etching or plasma etching, to expose the polysilicon layer308 over the contact projection 304, then any remaining mask material316 is removed, as illustrated in FIG. 13. A thin layer of cobalt 318 isdeposited, preferably by PVD, over the barrier material layer 314 andonto the exposed contact projection 304, as shown in FIG. 14. A hightemperature anneal step, preferably between about 400 and 800° C., mostpreferably between about 450 and 600° C. for between about 5 seconds and1 hour, is conducted in an inert atmosphere, preferably nitrogencontaining gas, to react the thin cobalt layer 318 with the exposedportion of the polysilicon layer 308 over the contact projection 304which forms a cobalt silicide layer 322, as shown in FIG. 15.

[0036] The nonreacted cobalt layer 318 is removed, preferably by a wetetch, such as hydrochloric acid/peroxide or sulfuric acid/peroxidemixtures, wherein the barrier material layer 314 preferably acts as anetch stop, as shown in FIG. 16. Preferably, the nonreacted cobalt layer318 is etched in a dilute HPM (Hydrochloric acid/Peroxide Mixture)solution (typically, 1 volume of hydrochloric acid to 1 volume ofperoxide to 5 volumes of water) for about 30 seconds at about 30° C.

[0037] As shown in FIG. 17, the remaining barrier material layer 314 isthen removed, preferably etching in an APM (Ammonia/Peroxide Mixture)solution (typically, 1 volume of ammonia to 1 volume of peroxide to 5volumes of water) for between about 1 and 2 minutes at about 65° C., andthe remaining second dielectric layer 312 and polysilicon layer 308 arealso removed, by any known technique. The cobalt silicide layer 322 isnot disturbed by the removal of the remaining barrier material layer 314or the removal of the second dielectric layer 312 and polysilicon layer308, as dry etches containing chlorine or fluorine will not etch cobaltsilicide (i.e., CoF_(x) and CoCl_(x) are nonvolatile).

[0038] Structures such as illustrated in FIG. 17 are generally used fortesting of flip-chips, wherein, as illustrated in FIG. 18, solder bumps332 of a flip-chip 330 electrically contact the cobalt silicide layer322. The cobalt silicide layer 322 conducts electrical signals to and/orreceives electrical signals from the flip-chip 330 through the solderbumps 332.

[0039] FIGS. 19-26 illustrate another method of forming a testingcontact used in backend testing of semiconductor devices. Elementscommon between FIGS. 10-17 and FIGS. 19-26 retain the same numericaldesignation.

[0040]FIG. 19 illustrates a substrate 302 having at least one contactprojection 304 disposed thereon, wherein the substrate 302 and thecontact projection 304 have a first dielectric layer 306, preferablysilicon dioxide, disposed thereover. A layer of polysilicon 308 isdeposited by any known technique over the first dielectric layer 306. Asshown in FIG. 20, a layer of barrier material 314, preferably titaniumnitride, is deposited over the polysilicon layer 308.

[0041] A mask material 316 is patterned on the barrier material layer314, as shown in FIG. 21. The barrier material layer 314 is then etchedto expose the polysilicon layer 308 over the contact projection 304,then any remaining mask material 316 is removed, as illustrated in FIG.22. A thin layer of cobalt 318 is deposited over the barrier materiallayer 314 and onto the exposed contact projection 304, as shown in FIG.23. A high temperature anneal step, preferably between about 400 and800° C., most preferably between about 450 and 600° C. for between about5 seconds and 1 hour, is conducted in an inert atmosphere, preferablynitrogen containing gas, to react the thin cobalt layer 318 with theexposed portion of the polysilicon layer 308 over the contact projection304 which forms a cobalt silicide layer 322, as shown in FIG. 24.

[0042] The nonreacted cobalt layer 318 is removed, preferably by a wetetch, such as hydrochloric acid/peroxide or sulfuric acid/peroxidemixtures, wherein the barrier material layer 314 preferably acts as anetch stop, as shown in FIG. 25. As shown in FIG. 26, the remainingbarrier material layer 314 and the remaining polysilicon 308 areremoved.

[0043] Having thus described in detail preferred embodiments of thepresent invention, it is to be understood that the invention defined bythe appended claims is not to be limited by particular details set forthin the above description as many apparent variations thereof arepossible without departing from the spirit or scope thereof.

What is claimed is:
 1. A method for forming a contact interface,comprising: providing a substrate including semiconductor material withat least one contact comprising semiconductor material protruding fromsaid substrate; forming a first layer comprising dielectric materialover said semiconductor material and said at least one contact; forminga second layer comprising polysilicon over said first layer and over atleast a portion of a lateral surface of said at least one contact; andforming a silicide contact at least an interface between saidelectrically conductive silicidable material and said second layer,including at said portion of said lateral surface.
 2. The method ofclaim 1, wherein said forming said first layer comprises forming silicondioxide.
 3. The method of claim 1, further comprising: forming a thirdlayer comprising barrier material over said second layer.
 4. The methodof claim 3, wherein said forming said third layer is effected beforesaid forming said silicide contact.
 5. The method of claim 4, furthercomprising: exposing at least a portion of said second layer locatedover said at least one contact, including at least a portion of saidsecond layer located over at least said portion of said lateral surfaceof said at least one contact through at least said third layer.
 6. Themethod of claim 3, wherein said forming said third layer comprisesforming a layer comprising at least one of titanium nitride, tungstennitride, tungsten silicon nitride, and titanium silicon nitride.
 7. Themethod of claim 3, further comprising forming a fourth layer comprisingdielectric material over said second layer prior to said forming saidthird layer.
 8. The method of claim 7, wherein said forming said fourthlayer comprises depositing TEOS.
 9. The method of claim 7, wherein saidforming said fourth layer comprises depositing silicon dioxide.
 10. Themethod of claim 1, wherein said forming said silicide contact comprisesdisposing electrically conductive silicidable material into contact withat least said portion of said second layer, including at least a portionof said lateral surface.
 11. The method of claim 10, wherein saiddisposing electrically conductive silicidable material comprisesdisposing cobalt.
 12. The method of claim 10, wherein said forming saidsilicide contact further comprises annealing said electricallyconductive silicide material and polysilicon of said portion of saidsecond layer.
 13. The method of claim 12, wherein said annealing iseffected by heating at least said semiconductor material to atemperature of about 400° C. to about 800° C.
 14. The method of claim12, wherein said annealing is effected by heating at least saidsemiconductor material to a temperature of about 450° C. to about 600°C.
 15. The method of claim 13, further comprising removing an unreactedportion of said electrically conductive silicidable material.
 16. Themethod of claim 15, wherein said removing said unreacted portion iseffected without substantially removing reacted electrically conductivesilicidable material.
 17. The method of claim 16, wherein said removingsaid unreacted portion is effected without substantially removing saidbarrier material.
 18. The method of claim 15, wherein said removing saidunreacted portion is effected with an hydrochloric/peroxide mixturesolution.
 19. The method of claim 10, further comprising: forming athird layer comprising barrier material over said second layer.
 20. Themethod of claim 19, wherein said forming said third layer is effectedbefore said forming said silicide contact.
 21. The method of claim 20,further including removing said third layer after said forming saidsilicide contact.
 22. The method of claim 21, wherein said removing saidthird layer is effected without substantially removing said silicidecontact.
 23. The method of claim 22, wherein said removing said thirdlayer is effected without substantially removing said first layer. 24.The method of claim 21, wherein said removing said third layer comprisessubstantially completely removing said barrier material.
 25. The methodof claim 21, wherein said removing is effected with an ammonia/perioxidemixture solution.
 26. The method of claim 19, wherein said forming saidthird layer comprises preventing said electrically conductivesilicidable material from reacting with said semiconductor materialthrough at least one of a void and an imperfection in said first layer.